LIGHT EMITTING DIODE WITH A SUPERLATTICE LAYER, CAPABLE OF ENHANCING A RECOMBINATION-RATE OF CARRIER BY IMPROVING A CRYSTALLINE OF A QUANTUM WELL

摘要

PURPOSE: A light emitting diode with a superlattice layer is provided to alleviate a strain inside an active area by forming an InN or InxGa1-xN superlattice layer between a nitride semiconductor layer and the active area.;CONSTITUTION: An active area(29) of multiple quantum wells is interposed between an n-type nitride semiconductor layer(27) and a p-type nitride semiconductor layer(33). The active area of multiple quantum wells comprises an InGaN quantum-well layer. A superlattice layer(28) is interposed between the n-type nitride semiconductor layer and an active area. The superlattice layer has a structure in which an InN layer and an InxGa1-xN(0=x1) layer are alternatively stacked. The In content of the InxGa1-xN(0=x1) layer inside the superlattice layer is less than that of an InGaN quantum-well layer inside the active area. The InxGa1-xN(0=x1) layer is contacted with the active area in the superlattice layer.;COPYRIGHT KIPO 2010