MANUFACTURING METHOD OF A PHASE CHANGE RANDOM ACCESS MEMORY DEVICE, CAPABLE OF CONTROLLING THE ETCH RATE ACCORDING TO AN ETCH SELECTION RATIO AND REDUCING AN LOADING EFFECT

摘要

PURPOSE: A manufacturing method of a phase change random access memory device is provided to improve the characteristics of an operating current of in a phase change memory device by preventing the attack to a phase change layer through an etch gag of a fluoride group.;CONSTITUTION: A phase change material layer(120) and a top electrode(130) are formed on a substrate successively. A patterned mask is formed on the top electrode. The phase change material layer and top electrode are patterned by a plasma etching process with a polymer etching gas to form a phase change pattern layer.;COPYRIGHT KIPO 2010