ORGANO METALLIC PRECURSOR FOR DEPOSITING A CERAMIC THIN FILM OF A SEMICONDUCTOR DEVICE, AND A MANUFACTURING METHOD OF THE THIN FILM USING THEREOF

摘要

PURPOSE: An organo metallic precursor for depositing a ceramic thin film and a manufacturing method of the thin film using thereof are provided to secure the high thermal stability and the high vapor pressure for manufacturing a semiconductor device.;CONSTITUTION: An organo metallic precursor for depositing a ceramic thin film or a metal thin plate containing cobalt is marked with chemical formula 1. A manufacturing method of the organo metallic precursor comprises the following: adding 1,4-diaza-2,3-butadien system compound to a cyclopentadienyl cobalt die carbonyl compound under the presence of a non-polar solvent or a weak-polarity solvent; and operating a reflux reaction before the decompression and the distillation of the mixture.;COPYRIGHT KIPO 2010