首页> 外国专利> THERMOELECTRIC COOLER FOR FLIP-CHIP SEMICONDUCTOR DEVICES, WHICH ADOPTS THERMOELECTRIC STRUCTURES AND A THROUGH-SILICON-VIA

THERMOELECTRIC COOLER FOR FLIP-CHIP SEMICONDUCTOR DEVICES, WHICH ADOPTS THERMOELECTRIC STRUCTURES AND A THROUGH-SILICON-VIA

机译:倒装半导体器件的热电冷却器,采用热电结构和贯穿硅的VIA

摘要

PURPOSE: A thermoelectric cooler for flip-chip semiconductor devices is provided to improve cooling efficiency by blocking feedback-heating by super lattice layers.;CONSTITUTION: A thermoelectric structure includes a first type super lattice layer(120) and a second type super lattice layer(130). The first type super lattice layer is formed on the upper side of an IC chip and is connected to a first voltage. A second type super lattice layer is formed on the lower side of the IC chip and is connected to a second voltage different from the first voltage. An active conducting current flows through first and second type super lattice layers to cool the IC chip. The first and second type super lattice layers are connected to first and second main power supply metal layers of the IC chip. A lower metal layer is formed on the lower side of the second type super lattice layer.;COPYRIGHT KIPO 2010
机译:目的:提供一种用于倒装芯片半导体器件的热电冷却器,以通过阻止超晶格层的反馈加热来提高冷却效率。组成:一种热电结构,包括第一类超晶格层(120)和第二类超晶格层(130)。第一类型超晶格层形成在IC芯片的上侧上,并且连接到第一电压。第二类型的超晶格层形成在IC芯片的下侧上,并且连接到与第一电压不同的第二电压。有源导电电流流过第一和第二类型的超晶格层,以冷却IC芯片。第一和第二类型超晶格层连接到IC芯片的第一和第二主电源金属层。在第二类型超晶格层的下侧上形成下部金属层。; COPYRIGHT KIPO 2010

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