PHOTORESIST PATTERN REMOVAL COMPOSITION INCLUDING A NITROGEN-CONTAINING APROTIC POLAR SOLVENT AND AN AMINOETHOXY ETHANOL, AND A FORMATION METHOD OF A METAL PATTERN USING THEREOF

摘要

PURPOSE: A photoresist pattern removal composition and a formation method of a metal pattern using thereof are provided to easily remove a photoresist pattern from a substrate, and to improve the removal reliability of the photoresist pattern.;CONSTITUTION: A photoresist pattern removal composition contains the following: 5~20wt% of aminoethoxy ethanol; 2~30wt% of polyalkylene oxides compound; 10~30wt% of glycol ether compound; and the balance of nitrogen-containing aprotic polar solvent. The weight average molecular weight of the polyalkylene oxides compound is 50~500. The polyalkylene oxides compound is marked with chemical formula 1. In the chemical formula 1, R is hydrocarbon with the carbon number of 1~4. The nitrogen-containing aprotic polar solvent contains N,N`-dimethylacetamide, N-methylformamide, or N-methylpyrrolidinone.;COPYRIGHT KIPO 2010