METHOD FOR PREVENTING THE GENERATION OF DEFECTS IN A METAL WIRING THROUGH A RAPID THERMAL ANNEALING PROCESS, BY PREVIOUSLY REMOVING MOISTURE CAUSING AN EXPLOSION DEFECT

摘要

PURPOSE: A method for preventing the generation of defects in a metal wiring is provided to form the metal wiring after a rapid thermal annealing process is performed with respect to moistures absorbed in the inner wall of a via and the boundary of an anti-diffusion film.;CONSTITUTION: An insulating film is formed on the lower metal wiring(300) of a semiconductor substrate. A via through the insulating film is formed. An anti-diffusion film(306) is applied to the inner wall of the via. Tungsten fills the inside of the via, and a chemical and mechanical polishing process is performed. A cleaning process is performed using a hydrofluoric acid(HF). A rapid thermal annealing process is performed. Metal is applied to the via, and a pattern process is performed in order to form an upper metal wiring(310).;COPYRIGHT KIPO 2010