首页>
外国专利>
PHASE-CHANGE MEMORY ELEMENT, PHASE-CHANGE MEMORY CELL, VACUUM TREATMENT DEVICE, AND METHOD FOR MANUFACTURING PHASE-CHANGE MEMORY ELEMENT
PHASE-CHANGE MEMORY ELEMENT, PHASE-CHANGE MEMORY CELL, VACUUM TREATMENT DEVICE, AND METHOD FOR MANUFACTURING PHASE-CHANGE MEMORY ELEMENT
展开▼
机译:相变存储器元件,相变存储器单元,真空处理装置以及制造相变存储器元件的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A phase-change memory element comprises a perovskite-type layer formed of a material having a perovskite-type structure and a phase-change recording material layer which is formed on the perovskite-type layer and which is energized via the perovskite-type layer, and thereby phase-changed into a crystal state or an amorphous state.;COPYRIGHT KIPO & WIPO 2010
展开▼