Phase-change electrical memory elements and devices

摘要

Electrical memory elements based on Ge-Sb-Te pure and doped by Sn-Se have been obtained by pulsed laser deposition on special substrates covered by gold as well as on common glass. A set of electrical memory elements in a 4x4 matrix structure on the glass substrate has been produced. Devices with 3 and 10 memory elements have been constructed and tested for their memory properties. The special features of the voltage-current characteristics have been revealed.