首页> 外国专利> LIGHT EMITTING DEVICE SUFFICIENTLY SECURING ESD TOLERANCE WITHOUT THE DEGRADATION OF THE INTENSITY OF RADIATION

LIGHT EMITTING DEVICE SUFFICIENTLY SECURING ESD TOLERANCE WITHOUT THE DEGRADATION OF THE INTENSITY OF RADIATION

机译:发光器件可在不降低辐射强度的情况下,有效地提高其ESD耐受性

摘要

PURPOSE: A light emitting device is provided to sufficiently secure ESD(Electrostatic Discharge) tolerance by improving dielectric strength of an insulation layer.;CONSTITUTION: A luminous function layer(13) is formed on a first conductivity semiconductor layer(12). A second conductive semiconductor layer(14) is formed on the luminous function layer. A first conductive electrode(15) is conducted with the exposed portion of the first conductive semiconductor layer. A second conductive electrode(16) is conducted with the second conductive semiconductor layer. The insulation layer is interposed between the luminous function layer and the second conductive semiconductor layer, and between the first and second conductive electrodes. The first conductive semiconductor insulation layer is attached to the insulation layer.;COPYRIGHT KIPO 2010
机译:用途:提供一种发光器件,以通过提高绝缘层的介电强度来充分确保ESD(静电放电)容限。组成:发光功能层(13)形成在第一导电半导体层(12)上。在发光功能层上形成第二导电半导体层(14)。第一导电电极(15)与第一导电半导体层的暴露部分导通。第二导电电极(16)与第二导电半导体层导通。绝缘层介于发光功能层与第二导电半导体层之间以及第一与第二导电电极之间。第一导电半导体绝缘层连接到绝缘层。COPYRIGHTKIPO 2010

著录项

  • 公开/公告号KR20100086424A

    专利类型

  • 公开/公告日2010-07-30

    原文格式PDF

  • 申请/专利权人 SONY CORPORATION;

    申请/专利号KR20100001495

  • 发明设计人 AOYAGI HIDEKAZU;

    申请日2010-01-08

  • 分类号H01L23/60;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:09

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