首页> 外国专利> METHOD FOR FORMING A SILICON LAYER MADE OF POLY-CRYSTAL SILICON BY USING A MICRO HEATER, A METHOD FOR FORMING A PN JUNCTION AND THE PN JUNCTION MADE BY THE SAME

METHOD FOR FORMING A SILICON LAYER MADE OF POLY-CRYSTAL SILICON BY USING A MICRO HEATER, A METHOD FOR FORMING A PN JUNCTION AND THE PN JUNCTION MADE BY THE SAME

机译:利用微加热器形成多晶硅的硅层的方法,形成PN结的方法和由该PN结形成的PN结

摘要

PURPOSE: A method for forming a silicon layer, a method for forming a pn junction, and the pn junction made by the same are provided to improve the quality of the pn junction by forming the silicon layer made of large grains.;CONSTITUTION: A micro heater comprising a substrate(10) and a metal pattern(30) separated from the substrate is prepared. A metal pattern is heated by applying the voltage to a metal pattern. A silicon layer(100) is formed on the metal pattern to expose the micro heater to the source gas. The source gas includes silicon. The silicon layer is made of the poly crystal silicon. An amorphous silicon layer is formed on the substrate.;COPYRIGHT KIPO 2010
机译:目的:提供一种形成硅层的方法,一种形成pn结的方法以及由其制成的pn结,以通过形成大晶粒的硅层来提高pn结的质量。制备包括基底(10)和与基底分离的金属图案(30)的微型加热器。通过向金属图案施加电压来加热金属图案。在金属图案上形成硅层(100),以使微加热器暴露于源气体。源气体包括硅。硅层由多晶硅制成。在衬底上形成非晶硅层。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100086735A

    专利类型

  • 公开/公告日2010-08-02

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20090006118

  • 发明设计人 CHOI JUN HEE;ZOULKARNEEV ANDREI;

    申请日2009-01-23

  • 分类号H01L21/205;H01L21/324;H01L29/00;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:10

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