EPITAXIAL GROWTH METHOD CAPABLE OF UNIFORMIZING THE LATTICE CONSTANT OF AN ENTIRE FIRST EPITAXIAL LAYER SURFACE, AND AN EPITAXIAL LAYER LAMINATED STRUCTURE THEREOF

摘要

PURPOSE: An epitaxial growth method and an epitaxial layer laminated structure thereof are provided to secure a stable optical property and an electrical property by minimizing defects which are generated in a second epitaxial layer.;CONSTITUTION: A first epitaxial layer where a deformity exists is prepared(S501). A metal quantum dot is formed on the first epitaxial layer(S502). The metal quantum dot moves the step of the first epitaxial layer with the difference of surface energy(S503). The metal quantum dot is transformed into a metal quantum dot semiconductor crystal which has a lattice constant corresponding to the lattice constant of the first epitaxial layer(S504). A second epitaxial layer is grown up on the first epitaxial layer(S505).;COPYRIGHT KIPO 2010