LIGHT EMITTING DIODE WHICH HAS INCREASED LIGHTING AREA BY PREVENTING THE AREA REDUCTION OF AN ACTIVE LAYER ADJACENT TO A CHIP DUE TO A WIRE BONDING PROCESS

摘要

PURPOSE: A light emitting diode is provided to improve the intensity of light by preventing the area reduction of an active layer adjacent to a chip due to a wire bonding process.;CONSTITUTION: A first n-hole passing through an upper side and a lower side is formed on a substrate. A n-type clad layer(330) is formed on the upper part of the substrate. A second n-hole which is connected to the first n-hole is formed. An active layer(340) is formed on the n-type clad layer. A p-type clad layer is formed on the active layer. An n-ohmic conductive layer(360) is formed inside the first n-hole and the second n-hole and is ohmic-contacted with the n-type clad layer.;COPYRIGHT KIPO 2010