首页> 外国专利> BOOSTING CIRCUIT REDUCING THE SIZE OF A BOOSTING CIRCUIT BY REDUCING THE NECESSITY OF BOOSTING VOLTAGE FOR RESET

BOOSTING CIRCUIT REDUCING THE SIZE OF A BOOSTING CIRCUIT BY REDUCING THE NECESSITY OF BOOSTING VOLTAGE FOR RESET

机译:引导电路通过减少引导电压的必要性来减小引导电路的尺寸

摘要

PURPOSE: A boosting circuit reducing the size of a boosting circuit is provided to reset the gate of the charge transmission transistor by applying a power voltage to the gate of the reset transistor.;CONSTITUTION: A charge transmission transistor(M1) outputs an input voltage to an output voltage while being on state. An output voltage boosting capacity increases the output voltage according to the input of a first clock signal while the charge transmission transistor is off. A control transistor(M2) controls the on/off of the charge transmission transistor. The gate voltage boosting capacity increase the gate voltage of the charge transmission transistor according to the input of the second clock signal. At least one boost cell includes a reset transistor resetting the gate of the charge transmission transistor.;COPYRIGHT KIPO 2010
机译:目的:提供一个减小升压电路尺寸的升压电路,通过向复位晶体管的栅极施加电源电压来复位电荷传输晶体管的栅极。组成:电荷传输晶体管(M1)输出输入电压处于导通状态时达到输出电压。当电荷传输晶体管截止时,输出升压能力根据第一时钟信号的输入来增加输出电压。控制晶体管(M2)控制电荷传输晶体管的导通/截止。栅极升压能力根据第二时钟信号的输入来增加电荷传输晶体管的栅极电压。至少一个升压单元包括一个重置晶体管,用于重置电荷传输晶体管的栅极。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100088080A

    专利类型

  • 公开/公告日2010-08-06

    原文格式PDF

  • 申请/专利权人 SEIKO INSTRUMENTS INC.;

    申请/专利号KR20100007287

  • 发明设计人 UTSUNOMIYA FUMIYASU;MITANI MAKOTO;

    申请日2010-01-27

  • 分类号G11C5/14;G11C7/20;G11C7/22;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:09

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