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LIGHT EMITTING DIODE UNIT, IN WHICH A BUFFER LAYER IS FORMED ON THE LOWER SIDE OF A QUANTUM-DOT LAYER, A DISPLAY DEVICE, AND A METHOD FOR MANUFACTURING THE LIGHT EMITTING DIODE UNIT
LIGHT EMITTING DIODE UNIT, IN WHICH A BUFFER LAYER IS FORMED ON THE LOWER SIDE OF A QUANTUM-DOT LAYER, A DISPLAY DEVICE, AND A METHOD FOR MANUFACTURING THE LIGHT EMITTING DIODE UNIT
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机译:在量子点层的下侧形成有缓冲层的发光二极管单元,显示装置以及制造该发光二极管单元的方法
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摘要
PURPOSE: A light emitting diode unit, a display device, and a method for manufacturing the light emitting diode unit are provided to improve the color-reproduction characteristic by diffusing light which is directed income in a quantum dot.;CONSTITUTION: At least one light emitting diode emits first light. A quantum dot layer(240) is located on the light emitting diode. The quantum dot layer includes a plurality of quantum dots which absorbs the first light and emits second light. A light emitting buffer layer(230) is interposed between the light emitting diode and the quantum dot layer. The quantum dots include cores, shells, and ligands which are attached on the shells.;COPYRIGHT KIPO 2010
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