首页> 外国专利> LIGHT EMITTING DIODE UNIT, IN WHICH A BUFFER LAYER IS FORMED ON THE LOWER SIDE OF A QUANTUM-DOT LAYER, A DISPLAY DEVICE, AND A METHOD FOR MANUFACTURING THE LIGHT EMITTING DIODE UNIT

LIGHT EMITTING DIODE UNIT, IN WHICH A BUFFER LAYER IS FORMED ON THE LOWER SIDE OF A QUANTUM-DOT LAYER, A DISPLAY DEVICE, AND A METHOD FOR MANUFACTURING THE LIGHT EMITTING DIODE UNIT

机译:在量子点层的下侧形成有缓冲层的发光二极管单元,显示装置以及制造该发光二极管单元的方法

摘要

PURPOSE: A light emitting diode unit, a display device, and a method for manufacturing the light emitting diode unit are provided to improve the color-reproduction characteristic by diffusing light which is directed income in a quantum dot.;CONSTITUTION: At least one light emitting diode emits first light. A quantum dot layer(240) is located on the light emitting diode. The quantum dot layer includes a plurality of quantum dots which absorbs the first light and emits second light. A light emitting buffer layer(230) is interposed between the light emitting diode and the quantum dot layer. The quantum dots include cores, shells, and ligands which are attached on the shells.;COPYRIGHT KIPO 2010
机译:目的:提供一种发光二极管单元,显示装置和制造发光二极管单元的方法,以通过将定向收入的光扩散到量子点中来改善色彩再现特性。构成:至少一个光发光二极管发出第一光。量子点层(240)位于发光二极管上。量子点层包括吸收第一光并发射第二光的多个量子点。发光缓冲层(230)介于发光二极管和量子点层之间。量子点包括核,壳和附着在壳上的配体。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100088830A

    专利类型

  • 公开/公告日2010-08-11

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20090007946

  • 发明设计人 BYUN JIN SEOB;

    申请日2009-02-02

  • 分类号H01L33/48;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:09

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号