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PLASMA DOPING METHOD AND A PLASMA DOPING APPARATUS, CAPABLE OF IMPROVING THE ACCURACY WITH RESPECT TO A DOPED AMOUNT OF PLASMA

机译:等离子掺杂方法和等离子掺杂装置,能够提高相对于掺杂量的等离子体的准确性

摘要

PURPOSE: A plasma doping method and a plasma doping apparatus are provided to stably perform a low-concentration doping operation by including a high frequency power unit which supplies high frequency power through a matching circuit.;CONSTITUTION: A vacuum container(1) includes a plasma generator(8). High frequency power is supplied to the plasma generator and generates plasma inside the vacuum container. The high frequency power is supplied to the sample electrode(6) in the vacuum container, and a low-concentration plasma doping process is performed with respect to a substrate on the sample electrode. The progressive wave and the reflected wave of the high frequency power is sample. If an integration value of the progressive wave and the reflected waves reaches to a pre-set value, the high frequency power is stop being supplied.;COPYRIGHT KIPO 2010
机译:目的:提供一种等离子体掺杂方法和等离子体掺杂设备,以通过包括通过匹配电路提供高频功率的高频功率单元来稳定地执行低浓度掺杂操作。组成:真空容器(1)包括等离子发生器(8)。高频功率被提供给等离子体发生器,并在真空容器内产生等离子体。将高频功率提供给真空容器中的样品电极(6),并对样品电极上的基板进行低浓度等离子体掺杂工艺。高频功率的渐进波和反射波是样本。如果逐行波和反射波的积分值达到预设值,则将停止提供高频功率。; COPYRIGHT KIPO 2010

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