METHOD FOR FORMING A SEMICONDUCTOR DEVICE, CAPABLE OF REDUCING THE THICKNESS OF A MASK FILM BY ETCHING THE MASK FILM THROUGH AN ETCH-BACK PROCESS

摘要

PURPOSE: A method for forming a semiconductor device is provided to minimize the bowing phenomenon of an opening part which passes through a dielectric film by dispersing regions in which scattered ions are concentrated.;CONSTITUTION: A dielectric film and a mask film are successively formed on the upper side of a substrate. A guide opening part is formed to expose the dielectric film through the mask film. The exposed dielectric film is etched through a primary anisotropic etching process(S200). The thickness of the mask film is reduces by etching the mask film through an etch-back process(S210). A secondary anisotropic etching process is performed using the mask with the reduce thickness(S220).;COPYRIGHT KIPO 2010