SOLUTION COMPOSITION FOR A CHEMICAL MECHANICAL POLISHING CAPABLE OF IMPROVING THE WETTING PROPERTY OF A SEMICONDUCTOR SUBSTRATE AND A POLISHING PAD AT A CHEMICAL MECHANICAL POLISHING PROCESS

摘要

PURPOSE: A solution composition for a chemical mechanical polishing is provided to control the generation of a dishing, and to reduce the generation of defects including a scratch.;CONSTITUTION: A solution composition for a chemical mechanical polishing contains amino acid or an amino acid derivative, a surfactant, and an additive accelerating the swelling of an abrasive particle. The additive is capable of controlling the viscosity of the polishing solution. The amino acid or amino acid derivative contain proline, lysine, arginine, N-methylglycine, glycine, or alanine. The surfactant is a non-ionic surfactant.;COPYRIGHT KIPO 2010