首页>
外国专利>
SEMICONDUCTOR MEMORY DEVICE, CAPABLE OF PREVENTING A CURRENT LEAKAGE PHENOMENON USING AN ON-CHIP POWER SWITCH AND AN OFF-CHIP POWER SWITCH
SEMICONDUCTOR MEMORY DEVICE, CAPABLE OF PREVENTING A CURRENT LEAKAGE PHENOMENON USING AN ON-CHIP POWER SWITCH AND AN OFF-CHIP POWER SWITCH
展开▼
机译:半导体存储器,能够使用片上电源开关和片外电源开关防止电流泄漏现象
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A semiconductor memory device is provided to prevent the generation of a current leakage phenomenon and a latch-up phenomenon by applying a pre-set voltage to an input node.;CONSTITUTION: A first power switch(21) prevents a first power voltage from being supplied to a first node in a stand-by mode. A second power-switch(24) is connected between the first node and a second node to which a second power voltage is supplied. A first power voltage driver(20) drives a first power voltage(VDD1). A second power voltage driver(22) drives a second power voltage(VDD2). An internal circuit(25) is connected between the first node and the second node.;COPYRIGHT KIPO 2010
展开▼