首页> 外国专利> MONOCRYSTAL MAKING METHOD USING NOTHING NECKING PROCESS OF CONSPICUOUSLY IMPROVING THE ELECTRIC POTENTIAL SUCCESSING YIELD

MONOCRYSTAL MAKING METHOD USING NOTHING NECKING PROCESS OF CONSPICUOUSLY IMPROVING THE ELECTRIC POTENTIAL SUCCESSING YIELD

机译:利用无要求的过程随意提高电势成功率的单晶制造方法

摘要

PURPOSE: The monocrystal making method using nothing necking process optimizes the rotation control of the seed crystal so that the mechanical stress added in the melt contiguous area of the seed crystal be minimized. Monocrystal can be increased to nothing necking process.;CONSTITUTION: The bottom of the seed crystal is touched with the melt while rotating the seed crystal(S10). The bottom of the seed crystal in which the electric potential is created with the thermal shock is made within melt the dipping and the dislocation generation site is fused(S20). The number of rotation of the seed crystal is gradually increased to the number of rotation for the crystal pulling(S30). Monocrystal is increased if the number of rotation of the seed crystal reaches to the monocrystal increase condition(S40).;COPYRIGHT KIPO 2011
机译:用途:不采用颈缩工艺的单晶制造方法可优化晶种的旋转控制,从而使在晶种的熔融连续区域内添加的机械应力降至最低。可以增加单晶至无颈缩的过程。;组成:在旋转晶种的同时,晶种的底部被熔体接触(S10)。在熔体内部使通过热冲击在其中产生电势的籽晶的底部浸入并使位错产生部位熔化(S20)。籽晶的转数逐渐增加到拉晶的转数(S30)。如果籽晶的转数达到单晶增加条件,则单晶增加(S40)。; COPYRIGHT KIPO 2011

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