VARIABLE RESISTANCE MEMORY DEVICE AND A FORMING METHOD THEREOF, CAPABLE OF REDUCING THE RESET CURRENT BY REDUCING THE CONTACT AREA BETWEEN THE PHASE VARIATION MATERIAL LAYER AND THE BOTTOM ELETRDOE

摘要

PURPOSE: A variable resistance memory device and a forming method thereof are provided to overcome the pitch limitation of photo process by patterning after forming a conductive layer on a plurality of selection components.;CONSTITUTION: A plurality of word lines(130) is formed on a substrate(110). The plurality of word lines is electrically insulated from each other by an element separating layer(120). A plurality of bit lines(195) intersecting the word lines(130) is formed on the substrate. A phase change material layer(180) for performing the memory function is formed between the word line and the bit line.;COPYRIGHT KIPO 2011