首页> 外国专利> METHOD FOR PROGRAMMING A NON-VOLATILE MEMORY DEVICE, CAPABLE OF IMPROVING THE RELIABILITY OF DATA BY REDUCING THE DISTRIBUTION WIDTH OF A THRESHOLD VOLTAGE

METHOD FOR PROGRAMMING A NON-VOLATILE MEMORY DEVICE, CAPABLE OF IMPROVING THE RELIABILITY OF DATA BY REDUCING THE DISTRIBUTION WIDTH OF A THRESHOLD VOLTAGE

机译:一种用于编程非易失性存储器的方法,该方法能够通过减小阈值电压的分布宽度来提高数据的可靠性

摘要

PURPOSE: A method for programming a non-volatile memory device is provided to reduce the distribution width of the threshold voltage in memory cells by controlling the number of the program verifying operations of the memory cells.;CONSTITUTION: A program command is inputted. A program and a program verifying operation are implemented according to each program pulse. At least one program verifying operation is omitted while the program is operated n times. A program voltage is increased as much as a step voltage which is set according to the application of the program pulse. The program pulse is different for each cell groups in a first memory cell or a second memory cell.;COPYRIGHT KIPO 2011
机译:目的:提供一种用于对非易失性存储器件进行编程的方法,以通过控制存储单元的编程验证操作的次数来减小阈值电压在存储单元中的分布宽度。组成:输入了编程命令。根据每个编程脉冲来执行程序和程序验证操作。当该程序被操作n次时,至少一个程序验证操作被省略。编程电压的增加幅度与根据编程脉冲的施加设置的步进电压一样。对于第一存储单元或第二存储单元中的每个单元组,编程脉冲均不同。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20100100393A

    专利类型

  • 公开/公告日2010-09-15

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090019263

  • 发明设计人 HAN JUNG CHUL;

    申请日2009-03-06

  • 分类号G11C16/34;G11C16/10;

  • 国家 KR

  • 入库时间 2022-08-21 18:31:54

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