首页> 外国专利> METHOD FOR FORMING A HIGH HEAT SINK INSULATION LAYER OF A METAL SUBSTRATES AND THE METAL SUBSTRATES PRODUCED BY USING THE SAME, CAPABLE OF IMPROVING WITHSTAND VOLTAGE, HEAT RESISTANCE, AND THERMAL CONDUCTIVITY

METHOD FOR FORMING A HIGH HEAT SINK INSULATION LAYER OF A METAL SUBSTRATES AND THE METAL SUBSTRATES PRODUCED BY USING THE SAME, CAPABLE OF IMPROVING WITHSTAND VOLTAGE, HEAT RESISTANCE, AND THERMAL CONDUCTIVITY

机译:形成金属基体和通过使用相同的,能够提高耐压,耐热性和导热性生产的金属基体的高热沉绝缘层的方法

摘要

PURPOSE: A method for forming a high heat sink insulation layer of a metal substrates and the metal substrates produced by using the same are provided to form a second insulating layer by printing low temperature co-fired ceramics on the top of a first insulating layer.;CONSTITUTION: The surface of a metal substrate is processed through sanding. Ceramic is spread on the top of the metal substrate to form a first insulation layer. Low temperature co-fired ceramics is screen-printed on the top of the first insulating layer. A second insulating layer is formed by drying the low temperature co-fired ceramics and making them plastic. The low temperature co-fired ceramics are Bi2O3-B2O3-SiO2-TiO2 or Bi2O3-SiO2-Al2O3-TiO2.;COPYRIGHT KIPO 2011
机译:目的:提供一种用于形成金属基板的高散热绝缘层的方法,以及通过使用该方法制造的金属基板,以通过在第一绝缘层的顶部印刷低温共烧陶瓷来形成第二绝缘层。 ;组成:金属基材的表面通过打磨处理。陶瓷散布在金属基板的顶部上以形成第一绝缘层。低温共烧陶瓷丝网印刷在第一绝缘层的顶部。通过干燥低温共烧陶瓷并使它们成为塑料来形成第二绝缘层。低温共烧陶瓷是Bi2O3-B2O3-SiO2-TiO2或Bi2O3-SiO2-Al2O3-TiO2。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20100112425A

    专利类型

  • 公开/公告日2010-10-19

    原文格式PDF

  • 申请/专利权人 YS THERMTECH CO. LTD.;

    申请/专利号KR20090030930

  • 发明设计人 KANG BYUNG SOO;

    申请日2009-04-09

  • 分类号H01L23/34;

  • 国家 KR

  • 入库时间 2022-08-21 18:31:44

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