Method for forming fine patterns by spacer patterning technology

摘要

patterned on a semiconductor substrate (patterning) is performed to form a target layer and the polysilicon (poly silicon) After forming the layer, the amorphous carbon (amorphous carbon) forms a partition (partition) of a layer pattern on the polysilicon layer. Mounting a spacer (spacer) on the side wall of the partition, and then selectively removing the partition, by selectively removing the ends of the spacer are separated by the bar (bar) pattern. Selectively etching the exposed by the separate bar (bar) to pattern the polysilicon layer portion after forming a polysilicon layer pattern, by selectively etching the target layer portion exposed by the polysilicon layer pattern to form a target layer pattern It proposes a method for fine pattern formation.