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A method for fabricating a semiconductor device and semiconductor device with semiconductor regions, which have differently shaped channel regions
A method for fabricating a semiconductor device and semiconductor device with semiconductor regions, which have differently shaped channel regions
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机译:一种用于制造半导体器件的方法和具有具有不同形状的沟道区的半导体区的半导体器件
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摘要
By locally modifying the intrinsic stress of a dielectric layer laterally enclosing gate electrode structures of a transistor configuration formed in accordance with in-laid gate techniques, the charge carrier mobility of different transistor elements may individually be adjusted. In particular, in in-laid gate structure transistor architecture, NMOS transistors and PMOS transistors may receive a tensile and a compressive stress, respectively.
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