A process for the preparation of a gate in a finfet - component and thin of a web, in a channel region of the finfet - component

摘要

A method of manufacturing a FinFET device includes forming a fin structure on an insulating layer. The fin structure includes a conductive fin. The method also includes forming source/drain regions and forming a dummy gate over the fin. The dummy gate may be removed and the width of the fin in the channel region may be reduced. The method further includes depositing a gate material to replace the removed dummy gate.