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A process for the focus correction of an exposure apparatus in the case of the lithographic projection and a process for the evaluation of measurement results of a measuring device for the focus correction of an exposure unit in a semiconductor manufacturing facility
A process for the focus correction of an exposure apparatus in the case of the lithographic projection and a process for the evaluation of measurement results of a measuring device for the focus correction of an exposure unit in a semiconductor manufacturing facility
A process for the focus correction of an exposure apparatus in the case of the lithographic projection, comprising the steps of:– Providing a semiconductor wafer (12);– Providing an exposure unit (5), which has a projection lens system (16), the position of the focus in the case of the lithographic projection is characterized by means of a focus value;– Providing a phases slide mask (20), which are based on a transparent substrate (22) in a first region (24) first changer elements (26) and in a second region (28) second changer elements (30), wherein the first changer elements (26) in comparison to the second phases slide elements (30) of different phase deviation of a changer elements (26; 30) which penetrates the light beam, the first changer elements (26) a first transmission and the second changer elements (30) one of the first transmission have different second transmission, wherein the first transmission and the second transmission be selected in such a way that in a bossung - diagram, the respective dimensions of the structural elements (42; 46) of the first pattern (40) and of the second pattern (44) as a function of the..
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