Test structure for determining the properties of half conductor alloys in soi - transistors by means of x-ray diffraction

摘要

Semiconductor component with:a substrate with a first soi - field and a second soi - field, wherein the first and second soi - region is a crystalline substrate region with a lattice mismatch in relation to a semiconductor layer on a buried insulating layer of the first and second soi - area is formed;a plurality of transistors, which in the first soi - field, and a semiconductor alloy; anda test structure, which, in the second soi - field is formed, the test structure a plurality of first test structure elements with the semiconductor alloy and a plurality of second test structure elements, wherein the second test structure elements laterally adjacent to the first test structure elements are designed and extending to said buried insulating layer of the second soi - area extend.