A method and semiconductor device with increased reliability for a contact structure for the connection of an active terrain with a polysilicon line

摘要

A method with:Forming a line (204) by means of an active region (211) of a semiconductor component (200), wherein the line (204) a side wall has a distance holder (206);Generating a dopant profile (207) in the active region (211);Removal of the side wall spacing holder (206) at least in a contact region for forming a contact, the said active region and the line (204) connects;Forming a metal silicide (208) in the active region (211) according to the removal of the side wall spacing holder (206) of at least the contact region;Forming a dielectric material (210) including an etch stop layer (209) via the active region (211); andForming a contact structure (250s) in the contact region,wherein the forming contact structure (250s) comprises: forming an opening in the dielectric material (210) on the basis of the etch stop layer (209) and performing an etching process in order, by means of the etch stop layer (209) to etching, wherein said metal silicide (208) is used as an etch stop material.