Metal covering layer with an increased electrode potential for copper based metal areas, in semiconductor components as well as processes for their preparation

摘要

Semiconductor component with:a substrate;a metallization system, which extends over the substrate is formed, wherein said metallizing system comprisesa metal line, which is designed in a dielectric layer and an upper surface,a conductive cover layer which, on the upper surface is provided, wherein the conductive outer layer is composed of a ternary alloy with tungsten and at least one metal, which is defined by a standard electrode potential, the less is negative in comparison to a standard electrode potential of cobalt (co), wherein the at least one metal aluminum, titanium, gold, silver or platinum comprises.