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Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices
Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices
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机译:用于半导体器件中铜基金属区域的电极电位增加的金属覆盖层
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摘要
A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.
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