首页> 外国专利> Device for treating large substrates, e.g. glass plates, in a plasma comprises a vacuum chamber with a gas-permeable plasma sleeve which imitates the outer contour of a substrate, an antenna arrangement and further plasma-producing units

Device for treating large substrates, e.g. glass plates, in a plasma comprises a vacuum chamber with a gas-permeable plasma sleeve which imitates the outer contour of a substrate, an antenna arrangement and further plasma-producing units

机译:用于处理大型基材的设备等离子玻璃板包括一个真空室,该真空室具有一个可透气的等离子套筒,该套筒模拟衬底的外轮廓,并具有天线装置和其他等离子体产生单元

摘要

Device for treating large substrates in a plasma comprises a vacuum chamber (1) with a gas-permeable plasma sleeve (3) which imitates the outer contour of a substrate (2), an antenna arrangement as plasma source for radiating electromagnetic waves and further plasma-producing units for forming a locally defined plasma in a defined region in front of the surface of the substrate so that an overlay plasma with defined plasma density distribution is formed in the defined region. An independent claim is also included for a method for operating the above device. Preferred Features: The antenna arrangement radiates microwaves with frequencies of 300 MHz to 100 GHz, preferably 915 MHz or 2.45 GHz. The further plasma-producing units include a plasma source, a plasma source based on waveguides or injected electrodes or a magnetic unit.
机译:用于处理等离子体中的大基板的设备包括:真空腔室(1),该腔室具有模仿基板(2)外部轮廓的可透气的等离子体套筒(3);作为等离子体源的天线装置,用于辐射电磁波以及其他等离子体-生产单元,用于在衬底表面的前面的限定区域中形成局部限定的等离子体,从而在限定区域中形成具有限定的等离子体密度分布的覆盖等离子体。还包括用于操作上述设备的方法的独立权利要求。优选的特征:天线装置辐射频率为300MHz至100GHz,优选为915MHz或2.45GHz的微波。其他等离子体产生单元包括等离子体源,基于波导或注入电极的等离子体源或磁性单元。

著录项

  • 公开/公告号DE102008027363A1

    专利类型

  • 公开/公告日2009-12-10

    原文格式PDF

  • 申请/专利权人 ROTH & RAU AG;

    申请/专利号DE20081027363

  • 申请日2008-06-09

  • 分类号H01J37/32;H05H1/34;H05H1/46;B29C59/14;C23C14/58;

  • 国家 DE

  • 入库时间 2022-08-21 18:28:57

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