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Optoelectronic semiconductor chip has semiconductor layer sequence for generating electromagnetic radiation, where reflector is provided with main surface, in which semiconductor layer sequence is provided
Optoelectronic semiconductor chip has semiconductor layer sequence for generating electromagnetic radiation, where reflector is provided with main surface, in which semiconductor layer sequence is provided
The optoelectronic semiconductor chip (10) has a semiconductor layer sequence (5) for generating an electromagnetic radiation. A reflector (3) is provided with a main surface (4), in which the semiconductor layer sequence is provided. The main surface is structured in two sub-areas (1,2) in a lateral direction (L). The former sub-area is made of indium tin oxide or zinc oxide, and the latter sub-area is made of silicon nitride or silicon dioxide.
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