Reduction of the threshold value voltage fluctuation in transistors with a channel half conductor alloy by reducing the separating speeds unequal to moderately

摘要

A threshold value - that develops semiconductor material, for example a silicon / germanium - alloy, is in a selective manner for a type of the transistors on the basis of a better separating provided as a function of the equal to moderately. For this purpose, the semiconductor alloy on the active areas of all transistors and is subsequently deposited on the basis of a well controllable structuring diagram structured. Consequently, a threshold value can be reduced degrees of.