Reduction of the threshold value voltage fluctuation in transistors with a channel half conductor alloy by reducing the separating speeds unequal to moderately

摘要

A method with:Forming a threshold value - adjusting semiconductor material (209) on a first and a second silicon - containing semiconductor region (203a, 203b);Introducing a dopant locations in the second silicon - containing semiconductor region (203b) by the use of an implantation mask (214b), which the first silicon - containing semiconductor region (203a) covers;Removal of the threshold value - adjusting semiconductor material (209) selectively from the second silicon - containing semiconductor region (203b) by forming a mask layer (205), structuring of the mask layer (205) using the said implantation mask (214b) and etching through the threshold value - adjusting semiconductor material (209) with the use of the structured mask layer as an etching mask (205); andForming a first gate - electrode structure of a first transistor to the threshold value - adjusting semiconductor material (209) and a second gate - electrode structure of a second transistor on the second silicon - containing semiconductor region (203b), wherein the first and second gate - electrode structure a dielectric material with a large ε and a metal - containing electrode material, which in the dielectric material is formed with a large ε.