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Metallizing system is a semiconductor component having, in addition, tapered via gear contacts

机译:镀金属系统是一种半导体部件,此外,它还具有通过齿轮触点渐缩的锥度

摘要

In a metallization system of a semiconductor component, a contact by means of gear by means of the guiding with a larger degree of taper is provided, by providing a corresponding sequence is modified etching. For example, the resist mask for the preparation of the opening of the contact is eroded once or several times, so that the lateral size of the corresponding mask opening, to increase. On the basis of the pronounced degree of taper are better separation conditions during the subsequent electrochemical deposition process for the joint filling of the contact opening and a wide associated trench is created.
机译:在半导体部件的金属化系统中,通过以较大的锥度引导通过齿轮进行接触,通过提供相应的顺序来进行改进的蚀刻。例如,用于制备接触件开口的抗蚀剂掩模被腐蚀一次或多次,使得相应的掩模开口的横向尺寸增大。基于显着的锥度,在随后的电化学沉积过程中,用于接头开口的联合填充的更好的分离条件形成了宽的相关沟槽。

著录项

  • 公开/公告号DE102008063430A1

    专利类型

  • 公开/公告日2010-07-08

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20081063430

  • 发明设计人

    申请日2008-12-31

  • 分类号H01L21/768;H01L23/528;

  • 国家 DE

  • 入库时间 2022-08-21 18:28:32

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