Thermal conversion of metallic precursor layer into semiconductor layer in thin layer solar cell, involves introducing chalcogen vapor/carrier gas mixture on substrate having precursor layer, heating, converting and cooling

摘要

An inlet and outlet side gas lock (4.1,4.2,4.3,4.4) for oxygen-tight closure of a furnace chamber (1) is formed. One or more substrates (6) prepared with at least one metallic precursor layer (7) are introduced into chamber. A chalcogen vapor/carrier gas mixture (10) is introduced on substrate. The substrate is heated in chalcogen vapor/carrier gas atmosphere to a final temperature and precursor layers are converted into semiconducting layers. The gas mixture not consumed in the reaction is removed, substrate is cooled and substrate is removed from chamber. An inlet and outlet side gas lock for oxygen-tight closure of a furnace chamber is formed. One or more substrates prepared with at least one metallic precursor layer are introduced into chamber. A chalcogen vapor/carrier gas mixture is introduced on substrate, and mixture is uniformly distributed along width of substrate. The substrate is heated in chalcogen vapor/carrier gas atmosphere to a final temperature and precursor layers are converted into semiconducting layers. The gas mixture not consumed in the reaction is removed, substrate is cooled and substrate is removed from chamber. An independent claim is included for device for thermal conversion of metallic precursor layer.