首页> 外国专利> Method for manufacturing optical surface of micro-lithography projection exposure apparatus, involves removing material in isotropic and anisotropic manner by local chemical and/or physical dry etching, and polishing removed material

Method for manufacturing optical surface of micro-lithography projection exposure apparatus, involves removing material in isotropic and anisotropic manner by local chemical and/or physical dry etching, and polishing removed material

机译:用于制造微光刻投影曝光设备的光学表面的方法,涉及通过局部化学和/或物理干法刻蚀以各向同性和各向异性的方式去除材料,并对去除的材料进行抛光

摘要

The method involves removing the material in isotropic and anisotropic manner by a local chemical and/or physical dry etching, and polishing the removed material. A surface roughness is visually qualified for the chemical dry etching, and a colloidal dispersion with a particle size is carried out, where the particle size lies between 5 to 70 nanometer. The colloidal dispersion is provided with silicon dioxide, where space-resolved treatment of an optical surface is carried out by the local chemical and/or physical dry etching. An independent claim is also included for a micro-lithography projection exposure apparatus comprising an optical element.
机译:该方法包括通过局部化学和/或物理干蚀刻以各向同性和各向异性的方式去除材料,并抛光去除的材料。表面粗糙度在视觉上适合化学干法蚀刻,并且进行具有粒径的胶体分散体,其中粒径在5至70纳米之间。胶体分散体具有二氧化硅,其中通过局部化学和/或物理干法蚀刻对光学表面进行空间分辨处理。对于包括光学元件的微光刻投影曝光设备也包括独立权利要求。

著录项

  • 公开/公告号DE102009019122A1

    专利类型

  • 公开/公告日2010-08-26

    原文格式PDF

  • 申请/专利权人 CARL ZEISS SMT AG;

    申请/专利号DE20091019122

  • 发明设计人 LUTZ ANDREAS;WEISER MARTIN;SCHURR MICHEL;

    申请日2009-04-29

  • 分类号G02B3/02;G03F7/20;G02B5/10;B24B13/00;

  • 国家 DE

  • 入库时间 2022-08-21 18:28:18

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