Circuit arrangement for three load-controlled circuit-breaker, has two insulated gate bipolar transistors and metal-oxide-semiconductor field-effect transistor

摘要

The circuit arrangement has two insulated gate bipolar transistors (T2,T3) and a metal-oxide-semiconductor field-effect transistor (T1). A collector-connection of the former insulated gate bipolar transistor is connected with the collector-connection of the latter insulated gate bipolar transistor. A source-connection of the metal-oxide-semiconductor field-effect transistor is connected with an emitter-connection of the latter insulated gate bipolar transistor.