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multi-channel, totally impoverished quantenmulden - cmosfets with low power consumption
multi-channel, totally impoverished quantenmulden - cmosfets with low power consumption
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机译:多通道,完全贫乏的量子化-低功耗的cmosfets
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摘要
A multiple-channel semiconductor device has fully or partially depleted quantum wells and is especially useful in ultra large scale integration devices, such as CMOSFETs. Multiple channel regions are provided on a substrate with a gate electrode formed on the uppermost channel region, separated by a gate oxide, for example. The vertical stacking of multiple channels and the gate electrode permit increased drive current in a semiconductor device without increasing the silicon area occupied by the device.
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