首页>
外国专利>
REDUCTION OF NEGATIVE PRE-EMPLOYMENT STABILITY OF PMOS WITH A CLEAR BREATH WITHIN USE OF F2 IMPLANTATION
REDUCTION OF NEGATIVE PRE-EMPLOYMENT STABILITY OF PMOS WITH A CLEAR BREATH WITHIN USE OF F2 IMPLANTATION
展开▼
机译:使用F2注入降低具有清晰呼吸的PMOS的负预沉积稳定性
展开▼
页面导航
摘要
著录项
相似文献
摘要
In a process of fabricating a narrow channel width PMOSFET device, the improvement of affecting reduction of negative bias temperature instability by use of F2 side wall implantation, comprising:a) forming a shallow trench isolation (STI) region in a substrate;b) forming a gate on a gate oxide in the substrate;c) forming a liner layer in said shallow trench isolation region and subjecting the liner layer to oxidation to form a STI liner oxidation layer;d) implanting F2 into side walls of the STI liner oxidation layer at a large tilted angle in sufficient amounts to affect reduction of negative bias temperature instability after a high density plasma fill of the STI F2 implanted liner oxidation layer; ande) filling the STI F2 implanted structure from step d) with a high density plasma (HDP) fill to affect reduction of negative bias temperature instability.
展开▼