optical halbleiterwellenleitervorrichtung with low divergence and use in a fabry perot or dfb lasers

摘要

The Low Divergent Beam Semiconductor has alternate layers of semiconductor placed between an outer holding zone (4,6). The layers are made up of a number of thin sections with refractive index greater than the surrounding zone (8) and followed by a second thin layer (10) where the refractive index is less than the surrounding area. the semiconductor structure provides a low laser beam divergent emitter for Fabry-perot lasers.