首页> 外国专利> The device and method for reduce the leakage current of memory cells in the embodiment of the inherent saving of energy.

The device and method for reduce the leakage current of memory cells in the embodiment of the inherent saving of energy.

机译:在固有地节省能量的实施例中,用于减小存储单元的泄漏电流的装置和方法。

摘要

The energy consumption of a cell of the static memory which can be connected with the help of transistors to a first bit line and a second line of bits of a pair of lines of bits is reduced, in a mode of operation to saving energy, by the fact that the potentials are on each of the bit lines of the pair of bit lines are adjusted so that a potential difference between the connections of the door of the transistors and the bit lines of the pair of bit lines is reduced with respect to a normal operating mode.
机译:在节省能量的操作模式下,可以减少静态存储单元的能量消耗,该单元可以在晶体管的帮助下连接到一对位线的第一位线和第二位线。调整位线对的每条位线上的电势这一事实,使得相对于α,减小了晶体管的门与位线对的位线之间的连接之间的电势差。正常操作模式。

著录项

  • 公开/公告号FR2916080B1

    专利类型

  • 公开/公告日2010-09-17

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号FR20070001757

  • 发明设计人 THOMAS KUENEMUND;

    申请日2007-03-12

  • 分类号G11C11/413;

  • 国家 FR

  • 入库时间 2022-08-21 18:26:55

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