首页> 外国专利> Device for preparing pure silicon nanowires by electrodeposition at ambient temperature in enclosure in isolation from atmosphere, includes depositing solution to be electrolyzed, solvent ion, substrate comprising membrane, and metal layer

Device for preparing pure silicon nanowires by electrodeposition at ambient temperature in enclosure in isolation from atmosphere, includes depositing solution to be electrolyzed, solvent ion, substrate comprising membrane, and metal layer

机译:通过在环境温度下与外壳隔离,在环境温度下电沉积而制备纯硅纳米线的装置,包括沉积待电解的溶液,溶剂离子,包括膜的基板和金属层

摘要

The device comprises a depositing solution to be electrolyzed, which is the source of pure silicon to be deposited by electrodeposition, a purified solvent ion of very high stability, which is able to dissolve the depositing solution to obtain a homogenized mixture (1) of the depositing solution and the ionic solvent and which is chosen based on their high silicon reduction potential, a substrate (2) comprising a nanoporous membrane of which the thickness and the diameter of pores are chosen depending on the desired length and diameter of silicon nanowires respectively, and a metal layer. The device comprises a depositing solution to be electrolyzed, which is the source of pure silicon to be deposited by electrodeposition, a purified solvent ion of very high stability, which is able to dissolve the depositing solution to obtain a homogenized mixture (1) of the depositing solution and the ionic solvent and which is chosen based on their high silicon reduction potential, a substrate (2) comprising a nanoporous membrane of which the thickness and the diameter of pores are chosen depending on the desired length and diameter of silicon nanowires respectively, and a metal layer of a minimum thickness of 50 nm deposited on the nanoporous membrane and forming a working electrode, a container (5) of electrolysis electrically insulated and resistant to chemical products used in the device, a platinum counter-electrode (4), a device (6) for applying a controlled potential difference corresponding to the silicon reduction potential depending on working conditions between the working electrode and a platinum-reference electrode (3). The pore diameter of the nanoporous membrane is chosen depending on the desired diameter of silicon nanowires, and the thickness of the metal layer is twice the diameter of used pores. The quantity of homogenized mixture of the depositing solution and ionic solvent is for wetting completely the substrate. The nanoporous membrane depositing on the metal layer is arranged at the bottom of the electrolysis container. The counter electrode is maintained by fastening the above substrate. The potential difference applying device serves as a working electrode and reference electrode, and a potentiostat, where the potential difference is -2700 mV. The deposition time depends on thickness and length of desired nanowires. The maximum length and diameter of nanowires are limited by the thickness of the used nanoporous membrane and the diameter of pores respectively. The rate of oxygen and water in the enclosure in isolation from the atmosphere are maintained and controlled below 1 ppm.
机译:该设备包括待电解的沉积溶液(它是通过电沉积沉积的纯硅的来源),极高稳定性的纯化溶剂离子,能够溶解该沉积溶液以获得均质的混合物(1)。沉积溶液和离子溶剂是基于其高的硅还原电位而选择的,该基底(2)包括纳米多孔膜,其孔径和直径分别根据所需的硅纳米线的长度和直径来选择,和金属层。该设备包括待电解的沉积溶液(它是通过电沉积沉积的纯硅的来源),极高稳定性的纯化溶剂离子,能够溶解该沉积溶液以获得均质的混合物(1)。沉积溶液和离子溶剂是基于其高的硅还原电位而选择的,该基底(2)包括纳米多孔膜,其孔径和直径分别根据所需的硅纳米线的长度和直径来选择,沉积在纳米多孔膜上并形成工作电极的最小厚度为50 nm的金属层,电绝缘且对装置中使用的化学产品具有抵抗力的电解容器(5),铂对电极(4),装置(6),其根据工件之间的工作条件施加与硅还原电位相对应的受控电位差g电极和铂参比电极(3)。根据所需的硅纳米线的直径来选择纳米多孔膜的孔径,并且金属层的厚度是所使用的孔径的两倍。沉积溶液和离子溶剂的均质混合物的量用于完全润湿衬底。沉积在金属层上的纳米多孔膜布置在电解容器的底部。通过固定上述基板来保持对电极。电位差施加装置用作工作电极和参比电极以及恒电位仪,其中电位差为-2700 mV。沉积时间取决于所需纳米线的厚度和长度。纳米线的最大长度和直径分别受所用纳米多孔膜的厚度和孔的直径限制。与大气隔离的外壳中的氧气和水的比率保持并控制在1 ppm以下。

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