Light transmitting device i.e. LED, for LCD of e.g. electronic device, has destructured structure formed on photoemissive surface of wafer, and with light dispersion coefficient/absorption ratio directly proportional to intensity difference

摘要

The device (100) has a photoemissive wafer (2) installed on a base (1) and forming a photoemissive surface. A reflecting cover (14) receiving the wafer is installed on the base. A destructured structure such as burnt artifact (3) or granular structure, is formed on the photoemissive surface of the wafer. The base includes two metallic contacts (11, 12) placed on an upper face of a substrate (10). Light dispersion coefficient or light absorption ratio of the structure is directly proportional to difference between a threshold light intensity and intensity of light emitted by the device. An independent claim is also included for a method for fabricating a light transmitting device.