首页> 外国专利> METHOD FOR REGENERATING SEED CRYSTAL IN PRODUCTION OF METAL FLUORIDE SINGLE CRYSTAL BY MELT-SOLIDIFICATION METHOD USING SEED CRYSTAL

METHOD FOR REGENERATING SEED CRYSTAL IN PRODUCTION OF METAL FLUORIDE SINGLE CRYSTAL BY MELT-SOLIDIFICATION METHOD USING SEED CRYSTAL

机译:晶种熔融凝固法在金属氟化物单晶生产中再生晶种的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for regenerating a seed crystal into a shape suitable for crystal growth in a crystal growth furnace, the seed crystal having a caving center portion at the bottom end compared to the circumference edge caused by troubles in the crystal growth furnace while producing a metal fluoride single crystal by Czochralski method or Kyropoulos method.;SOLUTION: The following operation is repeated on a seed crystal 116 having a caving center portion at the bottom end compared to the circumference edge. The operation comprises: descending the seed crystal 116 while rotating at 10 to 30 rpm so as to immerse the bottom end in a raw material melt 104 heated and held at a temperature higher by 10 to 100°C than the melting point; and elevating the seed crystal 116 within 120 seconds of immersion to bring the crystal into a non-contact state with the raw material melt 104. Thereby, the bottom end of the seed crystal 116 can be regenerated into a flat form. Then the seed crystal having the flat bottom end is used to start growing a single crystal.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:为了提供一种将晶种再生成适合在晶体生长炉中进行晶体生长的形状的方法,该晶种在底端具有比由晶体的故障引起的周缘相比下陷的中心部分通过Czochralski法或Kyropoulos法生产金属氟化物单晶;解决方案:对籽晶116重复以下操作,该籽晶116的底端具有比圆周边缘高的中心。该操作包括:在以10至30 rpm旋转的同时使籽晶116下降,以便将其底端浸入加热并保持在比熔点高10至100℃的温度下的原料熔体104中;并在浸入120秒内升高籽晶116以使晶体与原料熔体104处于非接触状态。由此,籽晶116的底端可以再生为扁平形式。然后使用具有平底端的籽晶开始生长单晶。版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2011213573A

    专利类型

  • 公开/公告日2011-10-27

    原文格式PDF

  • 申请/专利权人 TOKUYAMA CORP;

    申请/专利号JP20100274310

  • 申请日2010-12-09

  • 分类号C30B29/12;C30B15/36;G02B1/02;

  • 国家 JP

  • 入库时间 2022-08-21 18:25:42

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