首页> 外国专利> CAF2-MGF2 BINARY SINTERED COMPACT AND METHOD FOR MANUFACTURING PLASMA-PROOF FLUORIDE SINTERED COMPACT

CAF2-MGF2 BINARY SINTERED COMPACT AND METHOD FOR MANUFACTURING PLASMA-PROOF FLUORIDE SINTERED COMPACT

机译:CAF2-MGF2二元烧结体和制备耐等离子体氟化物烧结体的方法

摘要

PROBLEM TO BE SOLVED: To provide a plasma-proof fluoride sintered compact suitable for a component to which the high plasma-proof characteristics are required when used in an apparatus for manufacturing a silicon semiconductor, a compound semiconductor or the like.;SOLUTION: The plasma-proof fluoride sintered compact comprises a CaF2-MgF2 sintered compact containing MgF2 of 1 to 5 wt.% and has a dense structure having bulk density of the sintered compact of 3.00 g/cm3 or more.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种防等离子体的氟化物烧结体,该烧结的密封体适用于在用于制造硅半导体,化合物半导体等的设备中需要高的防等离子体特性的部件。耐等离子氟化物烧结体,其包含含有1〜5重量%的MgF 2 的CaF 2 -MgF 2 烧结体。烧结体的堆积密度为3.00 g / cm 3 或更高的结构。版权所有:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP2011098856A

    专利类型

  • 公开/公告日2011-05-19

    原文格式PDF

  • 申请/专利权人 DAIKO SEISAKUSHO:KK;

    申请/专利号JP20090254436

  • 发明设计人 NAKAMURA TETSUYUKI;SHIGEOKA TAKUJI;

    申请日2009-11-05

  • 分类号C04B35/553;H01L21/3065;H01L21/205;

  • 国家 JP

  • 入库时间 2022-08-21 18:24:16

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