SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, MATRIX CIRCUIT, DISPLAY ELEMENT, RADIO COMMUNICATION APPARATUS, ELECTRONIC APPARATUS, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an organic semiconductor device free from damages to an organic semiconductor layer having proper on/off ratio regardless of the presence of a source/drain electrode formed through etching process.;SOLUTION: The semiconductor device is constituted of a substrate 1, a gate electrode 2 formed on the substrate 1, a gate insulating layer 3 formed on the gate electrode 2 and the substrate 1, a p-type organic semiconductor layer 4 formed on the gate insulating layer 3, a protective layer 5 formed on the p-type organic semiconductor layer 4, and a source electrode 8 and a drain electrode 9 formed on the protective layer 5.;COPYRIGHT: (C)2011,JPO&INPIT