首页> 外国专利> SURFACE SMOOTHING METHOD FOR SILICON WAFER BEFORE FINAL POLISHING, AND SURFACE SMOOTHING DEVICE FOR SILICON WAFER

SURFACE SMOOTHING METHOD FOR SILICON WAFER BEFORE FINAL POLISHING, AND SURFACE SMOOTHING DEVICE FOR SILICON WAFER

机译:硅晶片最终抛光前的表面光洁度方法以及硅晶片的表面光洁度

摘要

PROBLEM TO BE SOLVED: To provide a surface smoothing method for a silicon wafer before final polishing capable of previously improving the flatness of a wafer surface after rough polishing before final polishing when the final polishing is applied to the surface of the silicon wafer after the rough polishing is applied and stably securing the surface characteristic of the wafer after the final polishing in a manufacturing step of the silicon wafer, and a surface smoothing device for the method.;SOLUTION: The flatness of the wafer surface is measured at a flatness measurement step (step #42) before the final polishing is applied, and after projection areas concentrically distributed on the surface are specified, a cup member for covering the projection areas in a radial direction of the wafer is arranged at a projection area removal step (step #44). A mixture gas of an ozone gas and the vapor of hydrogen fluoride is introduced into the cup member while rotating the wafer around at center of the wafer, and the projection areas are etching-removed by a chemical reaction with the mixture gas.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种用于在最终抛光之前对硅晶片进行表面平滑的方法,该方法能够在将粗抛光之后的硅晶片表面进行最终抛光时,预先改善粗抛光之后的晶片表面的平坦度,从而在最终抛光之前预先改善该表面。在硅晶片的制造步骤中进行抛光并稳定地确保最终抛光后晶片的表面特性,以及用于该方法的表面平滑装置;解决方案:在平坦度测量步骤中测量晶片表面的平坦度(步骤#42)在施加最终抛光之前,并且在表面上同心分布的投影区域被指定之后,在投影区域去除步骤中布置用于覆盖晶片的径向上的投影区域的杯状部件(步骤# 44)。将臭氧气体和氟化氢蒸气的混合气体引入杯形部件,同时围绕晶片中心旋转晶片,并且通过与混合气体的化学反应蚀刻去除凸起区域。 (C)2011,日本特许厅&INPIT

著录项

  • 公开/公告号JP2011101930A

    专利类型

  • 公开/公告日2011-05-26

    原文格式PDF

  • 申请/专利权人 SUMCO CORP;

    申请/专利号JP20090257971

  • 发明设计人 KOSASA KAZUAKI;KAWASAKI TOMONORI;

    申请日2009-11-11

  • 分类号B24B37/04;H01L21/304;H01L21/302;

  • 国家 JP

  • 入库时间 2022-08-21 18:23:43

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