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SURFACE SMOOTHING METHOD FOR SILICON WAFER BEFORE FINAL POLISHING, AND SURFACE SMOOTHING DEVICE FOR SILICON WAFER
SURFACE SMOOTHING METHOD FOR SILICON WAFER BEFORE FINAL POLISHING, AND SURFACE SMOOTHING DEVICE FOR SILICON WAFER
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机译:硅晶片最终抛光前的表面光洁度方法以及硅晶片的表面光洁度
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摘要
PROBLEM TO BE SOLVED: To provide a surface smoothing method for a silicon wafer before final polishing capable of previously improving the flatness of a wafer surface after rough polishing before final polishing when the final polishing is applied to the surface of the silicon wafer after the rough polishing is applied and stably securing the surface characteristic of the wafer after the final polishing in a manufacturing step of the silicon wafer, and a surface smoothing device for the method.;SOLUTION: The flatness of the wafer surface is measured at a flatness measurement step (step #42) before the final polishing is applied, and after projection areas concentrically distributed on the surface are specified, a cup member for covering the projection areas in a radial direction of the wafer is arranged at a projection area removal step (step #44). A mixture gas of an ozone gas and the vapor of hydrogen fluoride is introduced into the cup member while rotating the wafer around at center of the wafer, and the projection areas are etching-removed by a chemical reaction with the mixture gas.;COPYRIGHT: (C)2011,JPO&INPIT
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