首页> 外国专利> Ni ALLOY ELECTRODE FILM HAVING EXCELLENT RESISTIVITY STABILITY IN REPEATED HEATING, AND SPUTTERING TARGET FOR Ni ALLOY ELECTRODE FILM FORMATION

Ni ALLOY ELECTRODE FILM HAVING EXCELLENT RESISTIVITY STABILITY IN REPEATED HEATING, AND SPUTTERING TARGET FOR Ni ALLOY ELECTRODE FILM FORMATION

机译:重复加热时具有出色的电阻稳定性的镍合金膜,以及形成镍电极膜的溅射靶材

摘要

PROBLEM TO BE SOLVED: To provide an Ni alloy electrode film which has low electric resistance, and also has excellent resistivity stability in a repeated heating environment, and a sputtering target for forming the Ni alloy electrode film.;SOLUTION: The Ni alloy electrode film having excellent resistivity stability in repeated heating is formed on a substrate, which has a composition composed of W of 0.5 to 2.0 atomic%, and the balance Ni with inevitable impurities, and whose resistivity is ≤30 μΩcm. Further, the sputtering target for forming the Ni alloy electrode film has a composition composed of 0.5 to 2.0 atomic% W, and the balance Ni with inevitable impurities, and is used for forming an electrode film exposed to repeated heating.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种低电阻的Ni合金电极膜,并且在反复加热的环境中还具有优异的电阻率稳定性,以及形成该Ni合金电极膜的溅射靶。在基板上形成具有在反复加热中优异的电阻率稳定性的基板,该基板具有由0.5至2.0原子%的W以及具有不可避免的杂质的余量Ni组成的组成,并且其电阻率为±30μΩ·cm。此外,用于形成Ni合金电极膜的溅射靶具有由0.5至2.0原子%的W以及余量的Ni与不可避免的杂质组成的成分,并且用于形成暴露于重复加热的电极膜。 )2011,JPO&INPIT

著录项

  • 公开/公告号JP2011122212A

    专利类型

  • 公开/公告日2011-06-23

    原文格式PDF

  • 申请/专利权人 HITACHI METALS LTD;

    申请/专利号JP20090281639

  • 发明设计人 MURATA HIDEO;

    申请日2009-12-11

  • 分类号C23C14/14;H01L21/285;C23C14/34;C22C19/03;H01B5/14;G02F1/1345;G02F1/1343;H01B1/02;

  • 国家 JP

  • 入库时间 2022-08-21 18:23:38

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