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AL-NI-Y ALLOY FILMS FOR ELECTRODES OF SEMICONDUCTOR DEVICES AND SPUTTERING TARGETS FOR DEPOSITING THE AL-NI-Y ALLOY FILMS
AL-NI-Y ALLOY FILMS FOR ELECTRODES OF SEMICONDUCTOR DEVICES AND SPUTTERING TARGETS FOR DEPOSITING THE AL-NI-Y ALLOY FILMS
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机译:用于半导体器件电极的Al-Ni-Y合金膜以及用于沉积Al-NI-Y合金膜的溅射靶
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摘要
The invention provides an Al alloy film for use as an electrode of a semiconductor device and also provides an Al alloy sputtering target used to produce such an Al alloy film wherein the Al alloy film has not only a low resistivity equal to or less than 5 mu OMEGA cm and a high hillock resistance (property of hillock suppression) but also a high dielectric strength when it is anodized into an anodic oxide film and wherein the Al alloy film has a composition such that the Ni content is equal to or greater than 0.3 at % and the Y content is equal to or greater than 0.3 at % and such that 0.22 CNi+0.74 CY1.6 at % where CNi denotes the Ni content (at %) and CY denotes the Y content (at %) and further wherein, in order to deposit the Al alloy film by sputtering, a spray forming Al alloy target containing Ni and Y is used.
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